dongguan nanjing electronics ltd., to-92l plastic-encapsulate transistors 2SC2383 transistor (npn) feature y high voltage: v ceo =160v y large continuous collector current capability y complementary to 2sa1013 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 6 v i c collector current -continuous 1 a p c collector power dissipation 0.75 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax u nit collector-base breakdown voltage v(br) cbo i c = 100 a , i e =0 160 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 160 v emitter-base breakdown voltage v(br) ebo i e = 10 a, i c =0 6 v collector cut-off current i cbo v cb =150v, i e =0 1 a collector cut-off current i cer v cb =150v,r eb = 10m ? 10 a emitter cut-off current i ebo v eb =6v, i c =0 1 a h fe1 v ce =5v, i c =200ma 60 320 dc current gain h fe2 v ce =5v, i c =10ma 40 collector-emitter saturation voltage v ce(sat) i c =500m a, i b =50ma 1 v base-emitter voltage v be i c =5ma, v ce = 5v 0.75 v transition frequency f t v ce =5v, i c =200ma 20 mhz classification of h fe1 rank r o y range 60-120 100-200 160-320 to-92l 1. emitter 2. collector 3. base
10 100 1000 10 100 110 1 10 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 10 100 1000 300 600 900 1200 0 10203040506070 0 50 100 150 200 250 300 350 1 10 100 1000 10 100 300 600 900 1 10 100 1000 h fe ?? t a = 1 0 0 t a = 2 5 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 500 c ib c ob f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? capacitance c (pf) reverse voltage v (v) 20 p c ?? t a collector power dissipation p c (w) ambient temperature t a ( ) t a =25 t a =100 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector current i c (ma) common emitter t a =25 2SC2383 typical characteristics i c 2.0ma 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 0.4ma i b =0.2ma i c v ce collector current i c (ma) collector-emitter voltage v ce (v) common emitter v ce = 5v t a =100 t a =25 dc current gain h fe collector current i c (ma) 300 t a = 2 5 t a = 1 0 0 common emitter v ce =5v i c ?? v be collector current i c (ma) base-emmiter voltage v be (mv)
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